OVONIC UNIFIED MEMORY PDF

6 Dec Explore Ovonic Unified Memory with Free Download of Seminar Report and PPT in PDF and DOC Format. Also Explore the Seminar Topics. devices like Phase change memory (PCM), also called as Ovonic Unified Memory with OUM there were various other memory devices like FRAM, MRAM, and. Abstract: The development status of Ovonic Unified Memory (OUM), a phase- change non-volatile semiconductor memory technology for VLSI stand-alone.

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But unlike MRAM the resistance change is very ynified than a factor of This cuts down on cost since a diode is smaller and cheaper than a transistor.

We are now living in a world driven by various electronic equipments. Among the above-mentioned non-volatile Memories, Ovonic Unified Memory is the most promising one. For the past 30 years, relentless scaling of CMOS IC technology to smaller dimensions has enabled the continual introduction of complex microelectronics system functions.

In the MRAM, data are stored by applying magnetic fields that cause magnetic materials to be magnetized into one of two possible magnetic states. Current commercial technologies do not satisfy the density, radiation tolerance, or endurance requirements for space applications.

Passing currents nearby or through the magnetic structure creates the magnetic fields applied to each cell.

OUM’s dynamic range, difference between the electrical resistance in the crystalline state and in the amorphous state – is wide enough to allow more than one set of ON and OFF values in a cell, dividing it into several bits and multiplying memory density by two, four potential even 16 times. OUM is a type of nonvolatile memory, which uses chalcogenide materials for storage of binary data.

One of the fundamental approaches to manage this challenge is using new materials to build the next generation transistors. Test results confirmed that the insertion of a chalcogenide manufacturing flow had no effect on measured CMOS transistor parametric and did not change the total dose response of the base technology.

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Ovonic Unified Memory

OUM cells can be programmed to intermediate resistance values; e. They will not allow stacking of one memory chip over the other. Instead, a very small platter coated in chalcogenide is dragged beneath many thousands or even millions of electrical probes which can read and write the chalcogenide.

Ovonic unified memory — its name is derived from ”Ovshinsky” and ”electronic”. Measuring resistance changes in the cell performs the function of reading data.

Since the binary information is represented by two different phases of the material it is inherently non-volatile, requiring no energy to keep the material in either of its two stable structural states. The most important one among them is their ability to support expansion in three-dimensional spaces.

It also was desired to maximize the potential memory density of the technology by placing the memory element directly above the transistors and below the first level of metal.

Download your Reports for Ovonic Unified Memory Nowadays, digital memories are used in each and every fields of day-to-day life. To write data into the cell, the chalcogenide is heated past its melting point and then rapidly cooled to make it amorphous. OUM cell can be written 10 trillion times when compared with conventional flash memory.

Ovonic Unified Memory

Are you interested in this topic. Companies working with Ovonic Unified memory have their ultimate goal to gather enough data to begin a product design targeting a 1—4 Mbit C-RAM device that is latch-up and SEU immune to greater than LET and total dose hard to greater than 1 Mrad Sioperating across the full temperature range commonly specified for space applications.

But now we are entering an era of material limited scaling. RAM is high cost and volatile. OUM is a type of nonvolatile memory, which uses chalcogenide materials for storage of binary data. The OUM solid-state memory has cost advantages over conventional solid-state memories such as DRAM or Flash due to its thin-film nature, very small active storage media, and simple device structure. Semi conductors consist of array of transistors with each transistor being a simple switch between electrical 0 and 1.

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A memory cell consists of a top electrode, a layer of the chalcogenide, and a resistive heating element. Phase change memory also called Ovonic unified memory OUMis based on rapid reversible phase change effect in materials under the influence of electric current pulses.

OUM requires fewer steps in an IC manufacturing process resulting in reduced cycle times, fewer defects, and greater manufacturing flexibility. Minimum write and read cycle timing, layout spacing evaluation, data pattern insensitivity and other design related characterization will be conducted to support product optimization. For reading and writing data, MRAM can be as fast as a few nanoseconds, or billionths of a second, best among the next three generation memory candidates.

A voltage is applied upon the crystal, which in turn polarizes the internal dipoles up or down. In the September issue of Electronics Magazine, Gordon Moore memort co-founder of Intel – published an article on the technology. One or two of them will become the mainstream. As stated, revising the memory technology fields ruled by silicon technology is of great importance.

Ovonic Unified Memory Published on Dec 06, Current memory technologies have a lot of limitations. Semiconductors form the fundamental building blocks of the modern electronic world providing the brains and the memory of products all around unitied from washing machines to super computers. Are you interested in any one of this Seminar, Project Topics.

MRAM stores information by flip flopping two layers of magnetic material in and out of alignment with an electric current. The base of the heater is connected to a diode.

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More recently, interest and research have resumed as flash and DRAM memory technologies are expected to encounter scaling difficulties as chip lithography shrinks. The properties of chalcogenide glasses were first explored as a potential memory technology by Stanford Ovshinsky of Energy Conversion Devices in the s. Ones and zeros are hnified by crystalline versus amorphous phase states of active material.